Intel and Qinetiq develop 85nm quantum-well transistor

Posted on Wednesday, December 07 2005 @ 14:23 CET by Thomas De Maesschalck
The Register reports about a new breakthrough of Intel and Qinetiq.

Both companies announced they have made a quantum-well transistor with a gate length of 85nm. These kind of transistors are also known as high electron-mobility transistors and the advantage is their ability to operate at very high clock speeds at low voltages. They also use less power (and thus dissipate less heat) than today's transistors.
The Intel/Qintiq quantum-well transistor is based on a material called indium antimonide (InSb), which Qinetiq has been researching for some time through is R&D partnership with the UK's Ministry of Defence. According to Qinetiq, transistors made from InSb would consume a tenth of the energy gobbled up by today's state-of-the-art transistors yet deliver the same performance. Or they could be used to triple performance for the same power consumption.
Last year Intel and Qinetiq presented a 200mm quantum-well transistor. However, it are still early days for this technique. Intel expects it may be ready for commercial use by 2015.

About the Author

Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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